Rjp30e4 datasheets

Datasheets

Rjp30e4 datasheets

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Datasheets

RJP30H1 Datasheet PDF – N Channel IGBT – Renesas. Trench gate and thin wafer technology ( G6H- II series) 2. High speed switching: tr = 80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE( sat) = 1.

rjp30e4 datasheets

Low leak current: ICES= 1  A max. RJP30E4 IGBT - 360V N- Channel, Circuit, Pinout, Schematic, Equivalent, Replacement, Data, Sheet, Manual and Application notes. You can datasheet PDF files download.