Irf6100 datasheet 2n3904

Datasheet

Irf6100 datasheet 2n3904

5 A IDM datasheet Pulsed Drain Current ± 35 PD = 25° C Power Dissipation 2. Irf6100 datasheet 2n3904. IRFV Single P- channel HexFET irf6100 Power MOSFET in a 4- 2n3904 Lead FlipFET Package. IRF6100 Parameter Max. Ultra Low 2n3904 RDS( on) per Footprint irf6100 Area Low Thermal Resistance P- Channel MOSFET One- third Footprint of SOT- 23 Super Low Profile 2n3904 ( 2 PD = 70° irf6100 C Power Dissipation 1. 4 Linear Derating Factor 17 mW/ ° C VGS Gate- to- Source Voltage. Units VDS Drain- Source Voltage - 20 V datasheet ID @ TA datasheet = 25° C Continuous Drain Current, VGS @ 4. 1 ID @ TA = 70° C Continuous Drain Current, VGS @ 4.


Datasheet

IRF6100 Parameter Max. Units VDS Drain- Source Voltage - 20 V ID @ TA = 25° C Continuous Drain Current, VGS @ 4. 1 ID @ TA = 70° C Continuous Drain Current, VGS @ 4. 5 A IDM Pulsed Drain Current ± 35 PD = 25° C Power Dissipation 2. 2 PD = 70° C Power Dissipation 1. 4 Linear Derating Factor 17 mW/ ° C VGS Gate- to- Source Voltage.

irf6100 datasheet 2n3904

IRFV Single P- channel HexFET Power MOSFET in a 4- Lead FlipFET Package. Ultra Low RDS( on) per Footprint Area Low Thermal Resistance P- Channel MOSFET One- third Footprint of SOT- 23 Super Low Profile (